MOSCOW (MRC) -- Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh) has determined that QST® (Qromis Substrate Technology) substrate 1 is an essential material for the social implementation of high-performance, energy-efficient GaN (gallium nitride) power devices, and the company will promote the development and launching on the market of these products, said the company.
Since QST® substrate is designed to have the same coefficient of thermal expansion (CTE) as GaN, it enables suppression of warpage and cracking of the GaN epitaxial layer and resultant large-diameter, high-quality thick GaN epitaxial growth. Taking advantage of these characteristics, it is expected to be applied to power devices and RF devices (5G and beyond 5G), which have been rapidly growing in recent years, as well as in such areas as MicroLED growth for MicroLED displays.
In addition to sales of QST® substrates, Shin-Etsu Chemical will also sell GaN grown QST® substrates upon customer request. We currently have a line-up of 6? and 8? diameter substrates, and we are working on 12? diameter substrates. Since 2021, for each respective application for power devices, RF devices and LEDs, sample evaluation and device development are continuing with numerous customers in Japan and globally. Especially for power devices, continuous evaluation is underway for devices in the wide range of 650V to 1800V.
So far, Shin-Etsu Chemical has repeatedly made many improvements with regard to its QST® substrates. One example is the significant improvement in lowering defects originating from the bonding process, which has enabled the supply of high-quality QST® substrates. In addition, for the thicker GaN films that many of our customers have requested, we have promoted the provision of template substrates with optimized buffer layers, which enables our customers to realize stable epitaxial growth of more than 10 ?m thickness. Furthermore, various successful results have been produced and reported on, including the achievement of thick-film GaN growth exceeding 20 ?m using QST® substrates and the achievement of 1800V breakdown voltage*2 in power devices.
We remind, Shin-Etsu Chemical is investing Yen 100 bn (around USD720 M) in its silicones portfolio, one of its central parts of its Functional Materials business segment. The new investment will be used in its Naoetsu plant in Niigata Prefecture, Takefu plant in Fukui Prefecture and its Group company plant in Thailand. The company will also invest further in its present silicone plants in other Asian countries, Hungary, and the US.